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NTMSD3P102R2
10000
V GS = 0 V
1200
V DS = 0 V
V GS = 0 V
C iss
1000
T J = 150 ° C
1000
800
600
C rss
C iss
100
T J = 125 ° C
400
200
C oss
C rss
T J = 25 ° C
10
0
2
4
6
8
10
12
14
16
18
20
10
5
-V GS
0
5
-V DS
10
15
20
12
-V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
24 1000
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
V DS = -20 V
10
Q T
20
I D = -3.05 A
V GS = -10 V
V DS
8
V GS
16
100
t d(off)
6
12
t f
4
Q 1
Q 2
8
10
t d(on)
t r
2
4
0
0
2
4
6
8
10
I D = -3.05 A
T J = 25 ° C
12 14
0
16
1
1
10
100
1000
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
3
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
V DS = -20 V
I D = -1.5 A
V GS = -4.5 V
2.5
2
V GS = 0 V
T J = 25 ° C
100
t r
t f
t d(off)
t d(on)
1.5
1
0.5
10
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
R G , GATE RESISTANCE ( W )
Figure 10. Resistive Switching Time Variation
-V SD , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage vs. Current
vs. Gate Resistance
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